1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p<SUP>+</SUP>-GaAs Gate Hetero-Junction FET

Authors

  • Fumio HARIMA
  • Yasunori BITO
  • Hidemasa TAKAHASHI
  • Naotaka IWATA

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Published

2008-07-01

Issue

Vol. E91-C, No. 7 July 2008

Section

Papers