Enhancement-Mode n-Channel GaN MOSFETs Using HfO<SUB>2</SUB> as a Gate Oxide

Authors

Shun SUGIURA
Shigeru KISHIMOTO
Takashi MIZUTANI
Masayuki KURODA
Tetsuzo UEDA
Tsuyoshi TANAKA

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Published

2008-07-01

Issue

Vol. E91-C, No. 7 July 2008

Section

Papers