Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in InGaP/GaAs Collector-Up Heterojunction Bipolar Transistors Fabricated with B Ion Implantation

Authors

• Kazuhiro MOCHIZUKI
• Ken-ichi TANAKA
• Takashi SHIOTA
• Takafumi TANIGUCHI
• Hiroyuki UCHIYAMA